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4N25,4N25A,4N26,4N27,4N28(Short)
TOSHIBA Photocoupler GaAs IRed & Photo-Transistor
4N25(Short),4N25A(Short),4N26(Short),4N27(Short),4N28(Short)
AC Line / Digital Logic Isolator. Digital Logic / Digital Logic Isolator. Telephone Line Receiver. Twisted Pair Line Receiver High Frequency Power Supply Feedback Control. Relay Contact Monitor.
The TOSHIBA 4N25 (Short) through 4N28 (Short) consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. l Switching speeds: 3s (typ.) l Isolation resistance: 1011 (min.) l DC current transfer ratio: 100% (typ.)
Unit in mm
l Isolation voltage: 2500Vrms (min.) l UL recognized: UL1577, file No. E67349 TOSHIBA Weight: 0.4g 11-7A8
Pin Configurations(top view)
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2002-09-25
4N25,4N25A,4N26,4N27,4N28(Short)
Maximum Ratings (Ta = 25C)
Characteristic Forward current (continuous) Forward current derating LED Peak forward current Power dissipation Power dissipation derating Reverse voltage Collector-emitter voltage Collector-base voltage Detector Emitter-collector voltage Collector current (continuous) Power dissipation Power dissipation derating Storage temperature range Operating temperature range Coupled Lead soldering temperature (10s) Total package power dissipation Total package power dissipation derating (Note 1) Symbol IF IF / C IPF PD PD / C VR BVCEO BVCBO BVECO IC PC PC / C Tstg Topr Tsol PT PT / C Rating 80 1.07 (*) 3 150 2.0 (*) 3 30 70 7 100 150 2.0 (*) -55~150 -55~100 260 250 3.3 (*) Unit mA mA / C A mW mW / C V V V V mA mW mW / C C C C mW mW / C
(Note 1) Pulse width 300s, 2% duty cycle. (*) Above 25C ambient.
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2002-09-25
4N25,4N25A,4N26,4N27,4N28(Short)
Electrical Characteristics (Ta = 25)
Characteristic Forward voltage LED Reverse current Capacitance DC forward current gain Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-collector breakdown voltage Collector dark current Collector dark current Collector-emitter capacitance Current transfer ratio Collector-emitter saturation voltage Capacitance input to output Isolation resistance Coupled Symbol VF IR CD hFE V (BR) CEO V (BR) CBO V (BR) ECO ICEO ICBO CCE IC / IF VCE (sat) CS RS BVS 4N25, 4N25A Isolation voltage 4N26, 4N27 4N28 4N25A Rise / fall time Rise / fall time tr / tf tr / tf BVS (*) AC, peak Test Condition IF = 10 mA VR = 3 V V = 0, f = 1 MHz VCE = 5V, IC = 500 A IC = 1 mA, IF = 0 IC = 100 A IE = 100 A VCE = 10 V VCB = 10 V V = 0, f = 1 MHz IF = 10 mA, VCE = 10 V IF = 50 mA, IC = 2 mA VS = 0, f = 1 MHz VS = 500 V, R.H. 60 % AC, 1 minute Min. 30 70 7 20 10
11
Typ. 1.15 30 200 1 0.1 10 100 0.1 0.8
Max. 1.5 100 50 20 0.5
Unit V A pF V V V nA nA pF % V pF Vrms
Detector
2 200

2500 2500 1500 500
Vpk
AC, 1 second VCE = 10 V, IC = 2 mA RL = 100 VCB = 10 V, ICB = 50 A RL = 100
1775
Vrms s ns
(*)
JEDEC registered minimum BVS, however, TOSHIBA specifies a minimum BVS of 2500 Vrms, 1 minute.
3
2002-09-25
4N25,4N25A,4N26,4N27,4N28(Short)
4
2002-09-25
4N25,4N25A,4N26,4N27,4N28(Short)
5
2002-09-25
4N25,4N25A,4N26,4N27,4N28(Short)
6
2002-09-25
4N25,4N25A,4N26,4N27,4N28(Short)
RESTRICTIONS ON PRODUCT USE
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000707EBC
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. The products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice.
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2002-09-25

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